Feasibility study of sub-65nm contact/hole patterning

被引：0

作者：

Cheng, YF ^{[1
]}

Wu, TH ^{[1
]}

Lin, CL ^{[1
]}

Chang, Y ^{[1
]}

Lin, B ^{[1
]}

机构：

[1] United Microelect Corp, Adv OPC Dept, CRD Adv Modules, Tainan 741, Taiwan

来源：

Optical Microlithography XVIII, Pts 1-3 | 2005年 / 5754卷

关键词：

MEEF; sub-resolution assist feature; RELACS; SAFIER; QUASAR;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In 65nm and beyond generations, contact/via patterning is more challenging due to the complexity of manufacturing masks and the weak lithography process window. High NA scanners and suitable illumination can provide the desired resolution and dense pitch. However, there are trade-offs between process window, mask error enhancement factor (MEEF), and proximity effect. Some assistant technology is reported in literature, such as thermal flow, RELACS, SAFIER and sub-resolution assistant features. In this paper, we report a detailed study of the feasibility and limitations of these kinds of methods. Finally, we describe sub-resolution assistant features when used in QUASAR illumination with lower sigma, which have shown great promise to reduce the proximity effect and NEEF to get a larger lithography process window.

引用

页码：910 / 917

页数：8

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