Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

被引：27
|
作者：
Okumura, Hironori [1 ,2 ]
Martin, Denis [2 ]
Malinverni, Marco [2 ]
Grandjean, Nicolas [2 ]
机构：
[1] Univ Tsukuba, Inst Appl Phys, Ibaraki 3058573, Japan
[2] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 07期
关键词：
LIGHT-EMITTING-DIODES; EFFICIENCY; IMPURITIES; DEPENDENCE; JUNCTIONS;
D O I：
10.1063/1.4942369
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (<3 x 10(17) cm(-3)) responsible for p-type doping compensation. As a result, a net acceptor concentration of 7 x 10(19) cm(-3) was achieved, and the hole concentration measured by Hall effect was as high as 2 x 10(19) cm(-3) at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm(2) at a reverse bias of -1V at room temperature. (C) 2016 AIP Publishing LLC.
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页数：4
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