Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy

被引：28
|
作者：
Hurni, Christophe A. [1 ]
Lang, Jordan R. [1 ]
Burke, Peter G. [1 ]
Speck, James S. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期
关键词：
CHEMICAL-VAPOR-DEPOSITION; HYDROGEN; FILMS;
D O I：
10.1063/1.4751108
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The hole concentration p in Mg-doped GaN films grown by ammonia molecular beam epitaxy depends strongly on the growth temperature T-GR. At T-GR = 760 degrees C, GaN:Mg films showed a hole concentration of p = 1.2 x 10(18) cm(-3) for [Mg] = 4.5 x 10(19) cm(-3), while at T-GR = 840 degrees C, p = 4.4 x 10(16) cm(-3) for [Mg] = 7 x 10(19) cm(-3). Post-growth annealing did not increase p. The sample grown at 760 degrees C exhibited a low resistivity of 0.7 Omega cm. The mobility for all the samples was around 3-7 cm(2)/Vs. Temperature-dependent Hall measurements and secondary ion mass spectroscopy suggest that the samples grown at T-GR > 760 degrees C are compensated by an intrinsic donor rather than hydrogen. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751108]
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Effects of growth temperature on Mg-doped GaN epitaxial films grown by plasma-assisted molecular beam epitaxy
    Myoung, JM
    Kim, K
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (02): : 450 - 456
  • [2] Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy
    Kaschner, A
    Siegle, H
    Kaczmarczyk, G
    Strassburg, M
    Hoffmann, A
    Thomsen, C
    Birkle, U
    Einfeldt, S
    Hommel, D
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (22) : 3281 - 3283
  • [3] P-type Mg-doped GaN grown by molecular beam epitaxy using ammonia as the nitrogen source
    Yang, Z
    Li, LK
    Wang, WI
    [J]. GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 169 - 173
  • [4] Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
    Okumura, Hironori
    Martin, Denis
    Malinverni, Marco
    Grandjean, Nicolas
    [J]. APPLIED PHYSICS LETTERS, 2016, 108 (07)
  • [5] Mg-doped p-type GaN grown by reactive molecular beam epitaxy
    Kim, W
    Salvador, A
    Botchkarev, AE
    Aktas, O
    Mohammad, SN
    Morcoc, H
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (04) : 559 - 561
  • [6] Raman scattering and photoluminescence of Mg-doped GaN films grown by molecular beam epitaxy
    Popovici, G
    Xu, GY
    Botchkarev, A
    Kim, W
    Tang, H
    Salvador, A
    Morkoc, H
    Strange, R
    White, JO
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (08) : 4020 - 4023
  • [7] Polarity control during molecular beam epitaxy growth of Mg-doped GaN
    Green, DS
    Haus, E
    Wu, F
    Chen, L
    Mishra, UK
    Speck, JS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1804 - 1811
  • [8] Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy
    Cuscó, R
    Artús, L
    Pastor, D
    Naranjo, FB
    Calleja, E
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (06) : 897 - 899
  • [9] Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy
    Glaser, E. R.
    Murthy, M.
    Freitas, J. A., Jr.
    Storm, D. F.
    Zhou, L.
    Smith, D. J.
    [J]. PHYSICA B-CONDENSED MATTER, 2007, 401 : 327 - 330
  • [10] Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
    Zhang, Z.
    Arehart, A. R.
    Kyle, E. C. H.
    Chen, J.
    Zhang, E. X.
    Fleetwood, D. M.
    Schrimpf, R. D.
    Speck, J. S.
    Ringel, S. A.
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (02)
12345