Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy

被引：28

作者：

Hurni, Christophe A. ^{[1
]}

Lang, Jordan R. ^{[1
]}

Burke, Peter G. ^{[1
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期

关键词：

CHEMICAL-VAPOR-DEPOSITION; HYDROGEN; FILMS;

D O I：

10.1063/1.4751108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hole concentration p in Mg-doped GaN films grown by ammonia molecular beam epitaxy depends strongly on the growth temperature T-GR. At T-GR = 760 degrees C, GaN:Mg films showed a hole concentration of p = 1.2 x 10(18) cm(-3) for [Mg] = 4.5 x 10(19) cm(-3), while at T-GR = 840 degrees C, p = 4.4 x 10(16) cm(-3) for [Mg] = 7 x 10(19) cm(-3). Post-growth annealing did not increase p. The sample grown at 760 degrees C exhibited a low resistivity of 0.7 Omega cm. The mobility for all the samples was around 3-7 cm(2)/Vs. Temperature-dependent Hall measurements and secondary ion mass spectroscopy suggest that the samples grown at T-GR > 760 degrees C are compensated by an intrinsic donor rather than hydrogen. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751108]

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