Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

被引：31

作者：

Zhang, Z. ^{[1
]}

Arehart, A. R. ^{[1
]}

Kyle, E. C. H. ^{[2
]}

Chen, J. ^{[3
]}

Zhang, E. X. ^{[3
]}

Fleetwood, D. M. ^{[3
]}

Schrimpf, R. D. ^{[3
]}

Speck, J. S. ^{[2
]}

Ringel, S. A. ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 02期

关键词：

ELECTRON-MOBILITY TRANSISTORS; N-GAN; HYDROGEN PASSIVATION; DEFECTS; HETEROSTRUCTURES; CONDUCTIVITY; DISLOCATIONS; IMPLANTATION; LUMINESCENCE; SCHOTTKY;

D O I：

10.1063/1.4905783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 x 10(13) cm(-2) and 3 x 10(13) cm(-2) fluences not only introduces a trap with an E-V + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at E-V + 0.48 eV, E-V + 2.42 eV, E-V + 3.00 eV, and E-V + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment. (C) 2015 AIP Publishing LLC.

引用

页数：5

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