The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy

被引：16
|
作者：
Park, YS [1 ]
Na, JH
Taylor, RA
Park, CM
Lee, KH
Kang, TW
机构：
[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[2] Dongguk Univ, Dept Phys, Seoul 100715, South Korea
[3] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
来源：
NANOTECHNOLOGY | 2006年 / 17卷 / 03期
关键词：
D O I：
10.1088/0957-4484/17/3/049
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Magnesium-doped GaN nanorods were grown on Si(111) Substrates by plasma-assisted molecular-beam epitaxy. Time-integrated and time-resolved photoluminescence measurements were carried out to study the optical transitions. Two emission lines corresponding to blue emission at about 3.26 and 3.18 eV, with their corresponding phonon replicas, were observed. These peaks are attributed to conduction band to shallow acceptor transitions and to defects associated with column/substrate interface-shallow Mg acceptor complexes, respectively.
引用
收藏
页码：913 / 916
页数：4
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