GROWING GAN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

被引：0

作者：

BERESFORD, R

机构：

来源：

JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY | 1994年 / 46卷 / 03期

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暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The III-V compounds GaN and AlN have a variety of interesting properties that would prove useful in new applications. This article describes work aimed at the successful epitaxial growth of GaN on silicon substrates and details some of the novel applications that could be the result of such work.

引用

页码：54 / 58

页数：5

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BERESFORD, R
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[2] In as a surfactant for the growth of GaN (0001) by plasma-assisted molecular-beam epitaxy
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[4] MICROSTRUCTURE AND PHOTOLUMINESCENCE OF GAN GROWN ON SI(111) BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1994, 65 (01) : 61 - 63
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[J]. JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2012, 120 (1407) : 513 - 519
[6] AN INVESTIGATION OF THE PROPERTIES OF CUBIC GAN GROWN ON GAAS BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 1924 - 1929
[7] SURFACE RECONSTRUCTIONS OF ZINCBLENDE GAN/GAAS(001) IN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
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[J]. PHYSICAL REVIEW B, 1995, 52 (04) : R2253 - R2256
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[J]. JOURNAL OF APPLIED PHYSICS, 2020, 127 (01)
[9] GaN doped with neodymium by plasma-assisted molecular beam epitaxy
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[J]. APPLIED PHYSICS LETTERS, 2008, 92 (06)
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Lähnemann, Jonas
Cheng, Zongzhe
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Ramsteiner, Manfred
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