GROWING GAN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
BERESFORD, R
机构：
来源：
JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY | 1994年 / 46卷 / 03期
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暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The III-V compounds GaN and AlN have a variety of interesting properties that would prove useful in new applications. This article describes work aimed at the successful epitaxial growth of GaN on silicon substrates and details some of the novel applications that could be the result of such work.
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页码：54 / 58
页数：5
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