Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy

被引：27
|
作者：
Namkoong, G [1 ]
Doolittle, WA [1 ]
Brown, AS [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Ctr Microelect Res, Atlanta, GA 30332 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 26期
关键词：
D O I：
10.1063/1.1334942
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We describe dramatically decreased Mg incorporation in GaN above a critical Mg flux. Secondary ion mass spectroscopy analysis showed a linear increase in Mg concentration up to a flux equivalent to 8.0x10(-10) Torr beam equivalent pressure (BEP) and 1.6x10(-9) Torr BEP at 550 and 615 degreesC respectively, beyond which the Mg incorporation was reduced by factors of 10 for 550 degreesC, and 2 for 615 degreesC. In a transition region between this critical flux and higher flux, a time dependent incorporation phenomenon was observed. An increase in the GaN growth rate was also observed in the presence of Mg above the critical flux. (C) 2000 American Institute of Physics. [S0003-6951(00)05152-4].
引用
收藏
页码：4386 / 4388
页数：3
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