Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

被引：27

作者：

Okumura, Hironori ^{[1
,2
]}

Martin, Denis ^{[2
]}

Malinverni, Marco ^{[2
]}

Grandjean, Nicolas ^{[2
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Ibaraki 3058573, Japan

[2] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 07期

关键词：

LIGHT-EMITTING-DIODES; EFFICIENCY; IMPURITIES; DEPENDENCE; JUNCTIONS;

D O I：

10.1063/1.4942369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (<3 x 10(17) cm(-3)) responsible for p-type doping compensation. As a result, a net acceptor concentration of 7 x 10(19) cm(-3) was achieved, and the hole concentration measured by Hall effect was as high as 2 x 10(19) cm(-3) at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm(2) at a reverse bias of -1V at room temperature. (C) 2016 AIP Publishing LLC.

引用

页数：4

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