Embedded Nonvolatile Memory Technology

被引：3
|
作者：
Baker, Kelly [1 ]
机构：
[1] Freescale Semicond, Austin, TX 78735 USA
来源：
2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS | 2009年
关键词：
Embedded NVM; source-side programming; split gate bit cell;
D O I：
10.1109/ICICDT.2009.5166292
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the optimization of embedded Nonvolatile Memories (NVMs) for today's semiconductor applications. Process, design and device technology for embedded NVMs are surveyed, with a focus on bit cell selection, program/erase techniques, and emerging trends in the industry. Split-gate cells employing source-side programming, along with the use of nitride or nanocrystal charge storage, are shown to be good choices for an increasingly broad set of eNVM applications.
引用
收藏
页码：185 / 189
页数：5
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