Embedded Nonvolatile Memory Technology

被引：3
|
作者：
Baker, Kelly [1 ]
机构：
[1] Freescale Semicond, Austin, TX 78735 USA
来源：
2009 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS | 2009年
关键词：
Embedded NVM; source-side programming; split gate bit cell;
D O I：
10.1109/ICICDT.2009.5166292
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses the optimization of embedded Nonvolatile Memories (NVMs) for today's semiconductor applications. Process, design and device technology for embedded NVMs are surveyed, with a focus on bit cell selection, program/erase techniques, and emerging trends in the industry. Split-gate cells employing source-side programming, along with the use of nitride or nanocrystal charge storage, are shown to be good choices for an increasingly broad set of eNVM applications.
引用
收藏
页码：185 / 189
页数：5
相关论文
共 50 条
  • [11] A novel MNOS technology using gate hole injection in erase operation for embedded nonvolatile memory applications
    Ito, F
    Kawashima, Y
    Sakai, T
    Kanamaru, Y
    Ishii, Y
    Mizuno, M
    Hashimoto, T
    Ishimaru, T
    Mine, T
    Matsuzaki, N
    Kume, H
    Tanaka, T
    Shinagawa, Y
    Toya, T
    Okuyama, K
    Kuroda, K
    Kubota, K
    2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2004, : 80 - 81
  • [12] Current Status of Nonvolatile Semiconductor Memory Technology
    Fujisaki, Yoshihisa
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (10) : 1000011 - 1000014
  • [13] Future silicon nanocrystal nonvolatile memory technology
    Ostraat, ML
    De Blauwe, JW
    MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY, 2002, 686 : 135 - 145
  • [14] NanoBridge Technology: Nonvolatile FPGA and Memory Applications
    Tada, Munehiro
    2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2022,
  • [15] Ferroelectric nonvolatile memory technology and its applications
    Sumi, Tatsumi
    Judai, Yuji
    Hirano, Kanji
    Ito, Toyoji
    Mikawa, Takumi
    Takeo, Masato
    Azuma, Masamichi
    Hayashi, Shin-ichiro
    Uemoto, Yasuhiro
    Arita, Koji
    Nasu, Toru
    Nagano, Yoshihisa
    Inoue, Atsuo
    Matsuda, Akihiro
    Fuji, Eiji
    et. al.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 B): : 1516 - 1520
  • [16] Ferroelectric nonvolatile memory technology and its applications
    Sumi, T
    Judai, Y
    Hirano, K
    Ito, T
    Mikawa, T
    Takeo, M
    Azuma, M
    Hayashi, S
    Uemoto, Y
    Arita, K
    Nasu, T
    Nagano, Y
    Inoue, A
    Matsuda, A
    Fuji, E
    Shimada, Y
    Otsuki, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1516 - 1520
  • [17] OUM nonvolatile semiconductor memory technology overview
    Hudgens, Stephen J.
    CHALCOGENIDE ALLOYS FOR RECONFIGURABLE ELECTRONICS, 2006, 918 : 3 - 11
  • [18] Electrically programmable nonvolatile memory in CMOS technology
    Ermakov I.V.
    Shelepin N.A.
    Russian Microelectronics, 2015, 44 (7) : 449 - 452
  • [19] Current and future ferroelectric nonvolatile memory technology
    Fox, GR
    Chu, F
    Davenport, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (05): : 1967 - 1971
  • [20] Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin
    Lee, Cheng-Jung
    Chang, Yu-Chi
    Wang, Li-Wen
    Wang, Yeong-Her
    MATERIALS, 2018, 11 (01):
12345