An embedded NORST Flash Memory technology

被引：0
|
作者：
Pan, LY [1 ]
Liu, K [1 ]
Zeng, Y [1 ]
Guo, YZ [1 ]
Zhu, J [1 ]
机构：
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A NORST (NOR Flash Memory with a Select-Transistor) Flash Memory cell technology, which features a single 5V power supply, a small cell size of 14.88mum(2) and a good reliability, is demonstrated suitable for the embedded application under 1Mbit. It can work with byte erasing mode or sector erasing mode according to different embedded memory systems, and has a good reliability. An embedded memory system and its process technology, as well as the process result, is described in this paper.
引用
收藏
页码：217 / 220
页数：4
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