user

Preparation and properties of AlGaN/GaN MOSHFETs with MOCVD Al2O3 as gate oxide

被引：1
|
作者：
Stoklas, R. [1 ]
Cico, K. [1 ]
Gregusova, D. [1 ]
Novak, J. [1 ]
Kordos, P. [1 ,2 ]
机构：
[1] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia
[2] Slovak Tech Univ, Dept Microelect, YSK-81219 Bratislava, Slovakia
来源：
ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/ASDAM.2006.331200
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The I-V and C-V measurements were used for characterization of AlGaN/GaN HFETs and MOSHFETs. Deposited Al2O3 gate oxide yielded an increase of the sheet carrier density from 6.9 x 10(12) to 7.25 X 10(12) cm(-2) and subsequent increase of the drain current density up to 40% and increase of the extrinsic transconductance up to 37%, respectively. The gate leakage current of 10(-5) A/mm at -10 V is about 3 orders of magnitude lower than that of HFETs. This results indicate the suitability of a thick Al2O3 gate oxide for improvement of electronic properties of GaN-based MOSHFETs.
引用
收藏
页码：249 / 252
页数：4
相关论文
共 50 条
  • [31] AlGaN/AlN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistor with Annealed Al2O3 Gate Dielectric
    Lin, Yu-Shyan
    Wang, Heng-Wei
    [J]. SCIENCE OF ADVANCED MATERIALS, 2022, 14 (08) : 1419 - 1422
  • [32] AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al2O3 as Gate Dielectric
    Basu, Sarbani
    Singh, Pramod K.
    Sze, Po-Wen
    Wang, Yeong-Her
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (10) : H947 - H951
  • [33] Current instabilities and other reliability aspects in AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide
    Stoklas, R.
    Gregusova, D.
    Novak, J.
    Kordos, P.
    Tajima, M.
    Hashizume, T.
    [J]. NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2012, : 37 - 40
  • [34] TEM characterisation of GaN layers grown by MOCVD on Al2O3(0001)
    Rouviere, JL
    Arlery, M
    Bourret, A
    Niebuhr, R
    Bachem, K
    [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 285 - 288
  • [35] Polarity determination of GaN films grown by MOCVD on (0001)Al2O3
    Daudin, B
    Rouviere, JL
    Ligeon, E
    Arlery, M
    Niebuhr, R
    Bachem, KH
    [J]. BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 496 - 499
  • [36] Defect Structure of MOCVD Grown Epitaxial (0001) GaN/Al2O3
    [J]. 电子显微学报, 1997, (04) : 7 - 10
  • [37] Al2O3 surface passivation and MOS-gate fabrication on AlGaN/GaN high-electron-mobility transistors without Al2O3 etching process
    Kim, Jeong-Jin
    Park, Young-Rak
    Jang, Hyun-Gyu
    Na, Je-Ho
    Lee, Hyun-Soo
    Ko, Sang-Choon
    Jung, Dong-Yun
    Lee, Hyung-Seok
    Mun, Jae-Kyoung
    Lim, Jing-Hong
    Yang, Jeon-Wook
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (03)
  • [38] Dual -: Energy Si ion implantation in GaN/AlGaN/GaN layers on Al2O3
    Shiino, T.
    Saitoh, T.
    Kajiwara, H.
    Toyoda, Y.
    Satoh, M.
    Nakamura, T.
    [J]. REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, PROCEEDINGS, 2008, (26): : 97 - 99
  • [39] Simulation and Analysis of High Breakdown Voltage AlGaN/GaN MOSHEMTs with TiO2/Al2O3 Gate Dielectric
    Li, X. -P.
    Wang, J. -Y.
    Cai, J. -B.
    Liu, Y.
    Yang, Zh.
    Zhang, B.
    Wang, M. -J.
    Yu, M.
    Xie, B.
    Wu, W. -G.
    Zhang, J. -Ch
    Ma, X. -H.
    [J]. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013), 2013, 52 (01): : 841 - 846
  • [40] Improvement of the Interface Quality of the Al2O3/III-Nitride Interface by (NH4)2S Surface Treatment for AlGaN/GaN MOSHFETs
    Miyazaki, Eiji
    Kishimoto, Shigeru
    Mizutani, Takashi
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 2012, E95C (08): : 1337 - 1342
12345