Preparation and properties of AlGaN/GaN MOSHFETs with MOCVD Al2O3 as gate oxide

被引：1
|
作者：
Stoklas, R. [1 ]
Cico, K. [1 ]
Gregusova, D. [1 ]
Novak, J. [1 ]
Kordos, P. [1 ,2 ]
机构：
[1] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia
[2] Slovak Tech Univ, Dept Microelect, YSK-81219 Bratislava, Slovakia
来源：
ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/ASDAM.2006.331200
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The I-V and C-V measurements were used for characterization of AlGaN/GaN HFETs and MOSHFETs. Deposited Al2O3 gate oxide yielded an increase of the sheet carrier density from 6.9 x 10(12) to 7.25 X 10(12) cm(-2) and subsequent increase of the drain current density up to 40% and increase of the extrinsic transconductance up to 37%, respectively. The gate leakage current of 10(-5) A/mm at -10 V is about 3 orders of magnitude lower than that of HFETs. This results indicate the suitability of a thick Al2O3 gate oxide for improvement of electronic properties of GaN-based MOSHFETs.
引用
收藏
页码：249 / 252
页数：4
相关论文
共 50 条
  • [41] Effect of power cycling tests on traps under the gate of Al2O3/AlGaN/GaN normally-ON devices
    Elharizi, M.
    Zaki, F.
    Ibrahim, A.
    Khatir, Z.
    Ousten, J. P.
    [J]. MICROELECTRONICS RELIABILITY, 2018, 88-90 : 671 - 676
  • [42] Threshold voltages of AlGaN/GaN metal-insulator-semiconductor devices with AlN or Al2O3 gate insulators
    Demura, Hirotomo
    Deng, Yuchen
    Duong Dai Nguyen
    Suzuki, Toshi-kazu
    [J]. 2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [43] Electrical properties of Al2O3 gate dielectrics
    Lin, CH
    Kang, JF
    Han, DD
    Tian, DY
    Wang, W
    Zhang, JH
    Liu, M
    Liu, XY
    Han, RQ
    [J]. MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 830 - 834
  • [44] Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers
    Hashizume, Tamotsu
    Anantathanasarn, Sanguan
    Negoro, Noboru
    Sano, Eiichi
    Hasegawa, Hideki
    Kumakura, Kazuhide
    Makimoto, Toshiki
    [J]. Japanese Journal of Applied Physics, Part 2: Letters, 2004, 43 (6 B):
  • [45] Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers
    Hashizume, T
    Anantathanasarn, S
    Negoro, N
    Sano, E
    Hasegawa, H
    Kumakura, K
    Makimoto, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B): : L777 - L779
  • [46] Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating film
    Institute of Microelectronics, Xidian University, Xi'an 710071, China
    不详
    [J]. Wuli Xuebao, 2008, 3 (1886-1890):
  • [47] Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating film
    Feng Qian
    Hao Yue
    Yue Yuan-Zheng
    [J]. ACTA PHYSICA SINICA, 2008, 57 (03) : 1886 - 1890
  • [48] Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
    Partida-Manzanera, T.
    Zaidi, Z. H.
    Roberts, J. W.
    Dolmanan, S. B.
    Lee, K. B.
    Houston, P. A.
    Chalker, P. R.
    Tripathy, S.
    Potter, R. J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2019, 126 (03)
  • [49] Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
    Kikuta, Daigo
    Itoh, Kenji
    Narita, Tetsuo
    Mori, Tomohiko
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (01):
  • [50] Low-Leakage-Current AlN/GaN MOSHFETs Using Al2O3 for Increased 2DEG
    Huang, Tongde
    Zhu, Xueliang
    Wong, Ka Ming
    Lau, Kei May
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (02) : 212 - 214
12345