Polarity determination of GaN films grown by MOCVD on (0001)Al2O3

被引:0
|
作者
Daudin, B [1 ]
Rouviere, JL [1 ]
Ligeon, E [1 ]
Arlery, M [1 ]
Niebuhr, R [1 ]
Bachem, KH [1 ]
机构
[1] CEA GRENOBLE,DEPT RECH FONDAMENTALE MAT CONDENSEE,SPMM,F-38054 GRENOBLE 9,FRANCE
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:496 / 499
页数:4
相关论文
共 50 条
  • [1] TEM characterisation of GaN layers grown by MOCVD on Al2O3(0001)
    Rouviere, JL
    Arlery, M
    Bourret, A
    Niebuhr, R
    Bachem, K
    [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 285 - 288
  • [3] Polarity, morphology and reactivity of epitaxial GaN films on Al2O3(0001)
    Starke, U
    Sloboshanin, S
    Tautz, FS
    Seubert, A
    Schaefer, JA
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 177 (01): : 5 - 14
  • [4] Heteroepitaxy of ZnO films on epi-GaN/Al2O3(0001) by MOCVD
    Yu, Qiaoqun
    Ma, Jin
    Luan, Caina
    Kong, Lingyi
    Zhu, Zhen
    [J]. MATERIALS AND MANUFACTURING, PTS 1 AND 2, 2011, 299-300 : 444 - 447
  • [5] Evaluation of nanopipes in MOCVD grown (0001) GaN/Al2O3 by wet chemical etching
    Hong, SK
    Kim, BJ
    Park, HS
    Park, Y
    Yoon, SY
    Kim, YI
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 191 (1-2) : 275 - 278
  • [6] Structural and optical properties of SnO2 films grown on α-Al2O3(0001) by MOCVD
    Feng, Xianjin
    Ma, Jin
    Yang, Fan
    Ji, Feng
    Luan, Caina
    Ma, Honglei
    [J]. JOURNAL OF CRYSTAL GROWTH, 2008, 310 (02) : 295 - 298
  • [7] Wet Etching of (0001) GaN/Al2O3 grown by MOVPE
    B. J. Kim
    J. W. Lee
    H. S. Park
    Y. Park
    T. I. Kim
    [J]. Journal of Electronic Materials, 1998, 27 : L32 - L34
  • [8] Wet etching of (0001) GaN/Al2O3 grown by MOVPE
    Kim, BJ
    Lee, JW
    Park, HS
    Park, Y
    Kim, TI
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (05) : L32 - L34
  • [9] Comparison of the strain of GaN films grown on MOCVD-GaN/Al2O3 and MOCVD-GaN/SiC samples by HVPE growth
    Zhang, Lei
    Shao, Yongliang
    Hao, Xiaopeng
    Wu, Yongzhong
    Qu, Shuang
    Chen, Xiufang
    Xu, Xiangang
    [J]. JOURNAL OF CRYSTAL GROWTH, 2011, 334 (01) : 62 - 66
  • [10] Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substrates
    Mikroulis, S
    Georgakilas, A
    Kostopoulos, A
    Cimalla, V
    Dimakis, E
    Komninou, P
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (16) : 2886 - 2888