Simulation and Analysis of High Breakdown Voltage AlGaN/GaN MOSHEMTs with TiO2/Al2O3 Gate Dielectric

被引：1

作者：

Li, X. -P. ^{[1
]}

Wang, J. -Y. ^{[1
]}

Cai, J. -B. ^{[1
]}

Liu, Y. ^{[1
]}

Yang, Zh. ^{[1
]}

Zhang, B. ^{[1
]}

Wang, M. -J. ^{[1
]}

Yu, M. ^{[1
]}

Xie, B. ^{[1
]}

Wu, W. -G. ^{[1
]}

Zhang, J. -Ch ^{[2
]}

Ma, X. -H. ^{[2
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Xidian Univ, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Xian 710071, Peoples R China

来源：

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013) | 2013年 / 52卷 / 01期

关键词：

FIELD-EFFECT TRANSISTORS;

D O I：

10.1149/05201.0841ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Recently we have demonstrated the thermal oxidized TiO2/Al2O3 as gate dielectric for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility-transistors (MOS-HEMTs) with enhanced breakdown voltage of 490 V compared with 60-100 V breakdown voltage for normal HEMTs. The characteristics of GaN-based MOS-HEMTs with TiO2/Al2O3 gate dielectrics are measured and simulated using Sentaurus Device Software. The significant improvement of breakdown voltage of MOS-HEMTs with TiO2/Al2O3 gate oxide was analyzed. It is shown that the effect of TiO2 on surface electric potential distribution results in the improvement of breakdown voltage. This work will represent a solid basis for improvement of breakdown voltage and enhancement of the device reliability.

引用

页码：841 / 846

页数：6

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