Simulation and Analysis of High Breakdown Voltage AlGaN/GaN MOSHEMTs with TiO2/Al2O3 Gate Dielectric

被引：1
|
作者：
Li, X. -P. [1 ]
Wang, J. -Y. [1 ]
Cai, J. -B. [1 ]
Liu, Y. [1 ]
Yang, Zh. [1 ]
Zhang, B. [1 ]
Wang, M. -J. [1 ]
Yu, M. [1 ]
Xie, B. [1 ]
Wu, W. -G. [1 ]
Zhang, J. -Ch [2 ]
Ma, X. -H. [2 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Xidian Univ, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Xian 710071, Peoples R China
来源：
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013) | 2013年 / 52卷 / 01期
关键词：
FIELD-EFFECT TRANSISTORS;
D O I：
10.1149/05201.0841ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Recently we have demonstrated the thermal oxidized TiO2/Al2O3 as gate dielectric for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility-transistors (MOS-HEMTs) with enhanced breakdown voltage of 490 V compared with 60-100 V breakdown voltage for normal HEMTs. The characteristics of GaN-based MOS-HEMTs with TiO2/Al2O3 gate dielectrics are measured and simulated using Sentaurus Device Software. The significant improvement of breakdown voltage of MOS-HEMTs with TiO2/Al2O3 gate oxide was analyzed. It is shown that the effect of TiO2 on surface electric potential distribution results in the improvement of breakdown voltage. This work will represent a solid basis for improvement of breakdown voltage and enhancement of the device reliability.
引用
收藏
页码：841 / 846
页数：6
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