Simulation and Analysis of High Breakdown Voltage AlGaN/GaN MOSHEMTs with TiO2/Al2O3 Gate Dielectric

被引：1
|
作者：
Li, X. -P. [1 ]
Wang, J. -Y. [1 ]
Cai, J. -B. [1 ]
Liu, Y. [1 ]
Yang, Zh. [1 ]
Zhang, B. [1 ]
Wang, M. -J. [1 ]
Yu, M. [1 ]
Xie, B. [1 ]
Wu, W. -G. [1 ]
Zhang, J. -Ch [2 ]
Ma, X. -H. [2 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Xidian Univ, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Xian 710071, Peoples R China
来源：
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013) | 2013年 / 52卷 / 01期
关键词：
FIELD-EFFECT TRANSISTORS;
D O I：
10.1149/05201.0841ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Recently we have demonstrated the thermal oxidized TiO2/Al2O3 as gate dielectric for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility-transistors (MOS-HEMTs) with enhanced breakdown voltage of 490 V compared with 60-100 V breakdown voltage for normal HEMTs. The characteristics of GaN-based MOS-HEMTs with TiO2/Al2O3 gate dielectrics are measured and simulated using Sentaurus Device Software. The significant improvement of breakdown voltage of MOS-HEMTs with TiO2/Al2O3 gate oxide was analyzed. It is shown that the effect of TiO2 on surface electric potential distribution results in the improvement of breakdown voltage. This work will represent a solid basis for improvement of breakdown voltage and enhancement of the device reliability.
引用
收藏
页码：841 / 846
页数：6
相关论文
共 50 条
  • [21] Dielectric Breakdown of Al2O3/HfO2 Bi-Layer Gate Dielectric
    Sahoo, Kartika Chandra
    Oates, Anthony S.
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 14 (01) : 327 - 332
  • [22] Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse
    Gassoumi, M.
    Fathallah, O.
    Gaquiere, C.
    Maaref, H.
    [J]. PHYSICA B-CONDENSED MATTER, 2010, 405 (09) : 2337 - 2339
  • [23] Al2O3/AlGaN Channel Normally-Off MOSFET on Silicon With High Breakdown Voltage
    Freedsman, Joseph J.
    Hamada, Takeaki
    Miyoshi, Makato
    Egawa, Takashi
    [J]. IEEE ELECTRON DEVICE LETTERS, 2017, 38 (04) : 497 - 500
  • [24] Preparation and properties of AlGaN/GaN MOSHFETs with MOCVD Al2O3 as gate oxide
    Stoklas, R.
    Cico, K.
    Gregusova, D.
    Novak, J.
    Kordos, P.
    [J]. ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 2006, : 249 - 252
  • [25] Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer
    Gao, Sheng
    Zhou, Quanbin
    Liu, Xiaoyi
    Wang, Hong
    [J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (12) : 1921 - 1924
  • [26] Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack
    Hatano, Maiko
    Taniguchi, Yuya
    Kodama, Shintaro
    Tokuda, Hirokuni
    Kuzuhara, Masaaki
    [J]. APPLIED PHYSICS EXPRESS, 2014, 7 (04)
  • [27] Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
    Deng, Kexin
    Huang, Sen
    Wang, Xinhua
    Jiang, Qimeng
    Yin, Haibo
    Fan, Jie
    Jing, Guanjun
    Wei, Ke
    Zheng, Yingkui
    Shi, Jingyuan
    Liu, Xinyu
    [J]. APPLIED SURFACE SCIENCE, 2023, 638
  • [28] Resistive switching characteristics in memristors with Al2O3/TiO2 and TiO2/Al2O3 bilayers
    Alekseeva, Liudmila
    Nabatame, Toshihide
    Chikyow, Toyohiro
    Petrov, Anatolii
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (08)
  • [29] Fabrication of AlGaN/GaN MIS-HFET using an Al2O3 high k dielectric
    Park, KY
    Cho, HI
    Lee, JH
    Bae, SB
    Jeon, CM
    Lee, JL
    Kim, DY
    Lee, CS
    Lee, JH
    [J]. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2351 - 2354
  • [30] High breakdown voltage AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with TiO2/SiN gate insulator
    Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    不详
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (4 B): : 2309 - 2311
12345