Preparation and properties of AlGaN/GaN MOSHFETs with MOCVD Al2O3 as gate oxide

被引：1
|
作者：
Stoklas, R. [1 ]
Cico, K. [1 ]
Gregusova, D. [1 ]
Novak, J. [1 ]
Kordos, P. [1 ,2 ]
机构：
[1] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia
[2] Slovak Tech Univ, Dept Microelect, YSK-81219 Bratislava, Slovakia
来源：
ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/ASDAM.2006.331200
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The I-V and C-V measurements were used for characterization of AlGaN/GaN HFETs and MOSHFETs. Deposited Al2O3 gate oxide yielded an increase of the sheet carrier density from 6.9 x 10(12) to 7.25 X 10(12) cm(-2) and subsequent increase of the drain current density up to 40% and increase of the extrinsic transconductance up to 37%, respectively. The gate leakage current of 10(-5) A/mm at -10 V is about 3 orders of magnitude lower than that of HFETs. This results indicate the suitability of a thick Al2O3 gate oxide for improvement of electronic properties of GaN-based MOSHFETs.
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收藏
页码：249 / 252
页数：4
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