Fabrication of AlGaN/GaN MIS-HFET using an Al2O3 high k dielectric

被引：40

作者：

Park, KY ^{[1
]}

Cho, HI ^{[1
]}

Lee, JH ^{[1
]}

Bae, SB ^{[1
]}

Jeon, CM ^{[1
]}

Lee, JL ^{[1
]}

Kim, DY ^{[1
]}

Lee, CS ^{[1
]}

Lee, JH ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu, South Korea

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303437

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on a metal-insulator-semiconductor AlGaN/GaN heterostructure field-effect transistor (MIS-HFET) using Al2O3 simultaneously for channel passivation layer and as a gate insulator which was deposited by plasma enhanced atomic layer deposition(PE-ALD). Capacitance-voltage measurements show successful surface passivation by the Al2O3 dielectric layer. For a gate length 1.2 mum with 15 mum source-to-drain spacing the maximum drain current was 1.22 A/mm, the maximum transconductance was 166 mS/mm and the gate leakage current was 4 nA/mm at V-gs = -20 V which is at least three orders of magnitude lower than that of conventional AlGaN/GaN HFETs. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.

引用

页码：2351 / 2354

页数：4

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