Device characteristics and MIS interface evaluation of Al2O3/AlGaInN/AlGaN MIS HFET

被引：0
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作者：
Saito, Saki [1 ]
Hosomi, Daiki [1 ]
Furuoka, Keita [1 ]
Chen, Heng [1 ]
Kubo, Toshiharu [1 ]
Egawa, Takashi [1 ]
Miyoshi, Makoto [1 ]
机构：
[1] Nagoya Inst Technol, Nagoya, Aichi, Japan
来源：
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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