Silicon-germanium: Carbon HBTs are ready for mainstream RF BiCMOS processes

被引：0
|
作者：
Bindra, A
机构：
来源：
ELECTRONIC DESIGN | 2000年 / 48卷 / 11期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：32 / 32
页数：1
相关论文
共 50 条
  • [41] A 1 to 20 GHz Silicon-Germanium Low-Noise Distributed Driver for RF Silicon Photonic Mach-Zehnder Modulators
    Hosseinzadeh, Navid
    Jain, Aditya
    Ning, Kang
    Helkey, Roger
    Buckwalter, James F.
    2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, : 774 - 777
  • [42] TCAD simulation of hydrogenated amorphous silicon-carbon/microcrystalline-silicon/hydrogenated amorphous silicon-germanium PIN solar cells
    Chang, S. T.
    Tang, M.
    He, R. Y.
    Wang, W. -C.
    Pei, Z.
    Kung, C. -Y.
    THIN SOLID FILMS, 2010, 518 : S250 - S254
  • [43] Guard rings: Structures, design methodology, integration, experimental results, and analysis for RF CMOS and RF mixed signal BiCMOS silicon germanium technology
    Voldman, Steven H.
    Perez, Charles Nicholas
    Watson, Anne
    JOURNAL OF ELECTROSTATICS, 2006, 64 (11) : 730 - 743
  • [44] An automated design system methodology and strategy for electrostatic discharge protection circuits in RF CMOS and BiCMOS silicon germanium technology
    Voldman, SH
    Strang, SE
    Jordan, D
    JOURNAL OF ELECTROSTATICS, 2003, 59 (3-4) : 257 - 283
  • [45] Silicon germanium heterojunction bipolar transistor electrostatic discharge power clamps and the Johnson Limit in RF BICMOS SiGe technology
    Voldman, SH
    Ronan, B
    Juliano, PA
    Botula, A
    Hui, DT
    Lanzerotti, LD
    JOURNAL OF ELECTROSTATICS, 2002, 56 (03) : 341 - 362
  • [46] Silicon-Germanium bilayer sputtered onto a carbon nanotube sheet as anode material for lithium-ion batteries
    Bensalah, Nasr
    Kamand, Fadi Z.
    Mustafa, Noor
    Matalqeh, Maha
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 811
  • [47] Parasitic modeling and noise mitigation in advanced RF/mixed-signal silicon germanium processes
    Singh, R
    Tretiakov, YV
    Johnson, JB
    Sweeney, SL
    Barry, RL
    Kumar, M
    Erturk, M
    Katzenstein, J
    Dickey, CE
    Harame, DL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (03) : 700 - 717
  • [48] Reactive Force-Field Molecular Dynamics Study of the Silicon-Germanium Deposition Processes by Plasma Enhanced Chemical Vapor Deposition
    Uene, Naoya
    Mabuchi, Takuya
    Zaitsu, Masaru
    Yasuhara, Shigeo
    Tokumasu, Takashi
    2020 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2020), 2020, : 105 - 108
  • [49] Microstructure development in epitaxially grown in-situ Boron and Carbon co-doped strained 60% Silicon-Germanium layers
    Reznicek, Alexander
    Adam, Thomas N.
    Li, Jinghong
    Zhu, Zhengmao
    Murphy, Richard
    Bedell, Stephen W.
    Paruchuri, Vamsi
    Sadana, Devendra K.
    SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09): : 1013 - 1024
  • [50] Low-voltage BiCMOS circuit topologies for the design of a 19GHz, 1.2V, 466mW, 4-bit accumulator in silicon-germanium
    Bethel, Ryan
    Kotecki, David E.
    2007 14TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-4, 2007, : 1127 - +
12345