Silicon-germanium: Carbon HBTs are ready for mainstream RF BiCMOS processes

被引：0
|
作者：
Bindra, A
机构：
来源：
ELECTRONIC DESIGN | 2000年 / 48卷 / 11期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：32 / 32
页数：1
相关论文
共 50 条
  • [21] Simulation of effects of emitter and collector widths on performance of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs)
    Khadir, A.
    Sengouga, N.
    Kouzou, A.
    Abdelhafidi, M. K.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 17 (02) : 682 - 688
  • [22] Characterization on ESD devices with test structures in silicon germanium RF BiCMOS process
    Ker, MD
    Wu, WL
    Chang, CY
    ICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2004, : 7 - 12
  • [23] EFFECTS OF TEMPERATURE ON STRUCTURAL-PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM AND CARBON-SILICON-GERMANIUM ALLOYS
    BATTEZZATI, L
    DEMICHELIS, F
    PIRRI, CF
    TRESSO, E
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2029 - 2032
  • [24] Effect of point defect injection on diffusion of boron in silicon and silicon-germanium in the presence of carbon
    Karunaratne, MSA
    Willoughby, AFW
    Bonar, JM
    Zhang, J
    Ashburn, P
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)
  • [25] A Fully-Integrated W-band Imaging Receiver IC in Silicon-Germanium BiCMOS Technology
    Gilreath, Leland
    Jain, Vipul
    Yao, Hsin-Cheng
    Zheng, Le
    Heydari, Payam
    PASSIVE MILLIMETER-WAVE IMAGING TECHNOLOGY XIII, 2010, 7670
  • [26] Effect of point defect injection on diffusion of boron in silicon and silicon-germanium in the presence of carbon
    Karunaratne, M.S.A., 1600, American Institute of Physics Inc. (97):
  • [27] SIMS Analysis of Atomic Composition of Silicon-Germanium Films Deposited by RF Plasma Discharge
    Martinez, H. E.
    Kosarev, A.
    Kudriavtsev, Y.
    2015 12TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE 2015), 2015,
  • [28] ELECTRONIC-PROPERTIES OF RF-SPUTTERED UNHYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOY
    TAKANO, Y
    KITAOKA, N
    OZAKI, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02): : 150 - 153
  • [29] Low-temperature preparation of oxygen- and carbon-free silicon and silicon-germanium surfaces for silicon and silicon-germanium epitaxial growth by rapid thermal chemical vapor deposition
    Carroll, MS
    Sturm, JC
    Yang, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (12) : 4652 - 4659
  • [30] Silicon-Germanium and carbon-based superconductors for electronic, industrial, and medical applications
    Tayaba, Syeda
    Sethi, Hassam
    Shahid, Huma
    Malik, Rumaisa
    Ikram, Muhammad
    Ali, Salamat
    Khaliq, Sunbal
    Khan, Qasim
    Maqbool, Muhammad
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2023, 290
12345