Silicon-germanium: Carbon HBTs are ready for mainstream RF BiCMOS processes

被引：0
|
作者：
Bindra, A
机构：
来源：
ELECTRONIC DESIGN | 2000年 / 48卷 / 11期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：32 / 32
页数：1
相关论文
共 50 条
  • [31] IMPROVEMENT OF CRYSTAL QUALITY OF EPITAXIAL SILICON-GERMANIUM ALLOY LAYERS BY CARBON ADDITIONS
    MI, J
    LETOURNEAU, P
    GANIERE, JD
    GAILHANOU, M
    DUTOIT, M
    DUBOIS, C
    DUPUY, JC
    BREMOND, G
    HELVETICA PHYSICA ACTA, 1994, 67 (02): : 219 - 220
  • [32] Axial temperature distribution in silicon-germanium grown by the RF-heated float zone technique
    Schulz, D
    Wollweber, J
    Darowski, N
    Schroder, W
    CRYSTAL RESEARCH AND TECHNOLOGY, 1997, 32 (01) : 61 - 68
  • [33] Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICS
    Subbanna, S
    Larson, L
    Freeman, G
    Ahlgren, D
    Stein, K
    Dickey, C
    Mecke, J
    Rincon, A
    Bacon, P
    Groves, R
    Soyuer, M
    Harame, D
    Dunn, J
    Rowe, D
    Chon, W
    Herman, D
    Meyerson, B
    PROCEEDINGS OF THE IEEE 2001 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2001, : 559 - 566
  • [34] Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon source/drain stressors
    Ang, KW
    Chui, KJ
    Bliznetsov, V
    Tung, CH
    Du, A
    Balasubramanian, N
    Samudra, G
    Li, MF
    Yeo, YC
    APPLIED PHYSICS LETTERS, 2005, 86 (09) : 1 - 3
  • [35] Study of the effect of the deposition RF power on the characteristics of microcrystalline Silicon-Germanium thin films produced by PECVD
    Arturo Torres
    Mario Moreno
    Pedro Rosales
    Miguel Domínguez
    Alfonso Torres
    Adrian Itzmoyotl
    Roberto Ambrosio
    Javier de la Hidalga
    MRS Advances, 2018, 3 (64) : 3939 - 3947
  • [36] Study of the effect of the deposition RF power on the characteristics of microcrystalline Silicon-Germanium thin films produced by PECVD
    Torres, Arturo
    Moreno, Mario
    Rosales, Pedro
    Dominguez, Miguel
    Torres, Alfonso
    Itzmoyotl, Adrian
    Ambrosio, Roberto
    de la Hidalga, Javier
    MRS ADVANCES, 2018, 3 (64): : 3939 - 3947
  • [37] Effect of Hydrogen Dilution on Morphology and Electronic properties of Silicon-Germanium films deposited by RF Plasma Discharge
    Martinez, H. E.
    Ospina, C.
    Kosarev, A.
    2015 12TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE 2015), 2015,
  • [38] A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I - ESD
    Voldman, SH
    MICROELECTRONICS RELIABILITY, 2005, 45 (02) : 323 - 340
  • [39] Mcro-crystalline silicon-germanium thin films prepared by the multi-target RF sputtering system
    Ajiki, T
    Nakamura, I
    Isomura, M
    Amorphous and Nanocrystalline Silicon Science and Technology-2005, 2005, 862 : 201 - 206
  • [40] RF PLASMA DEPOSITION OF AMORPHOUS SILICON-GERMANIUM ALLOYS - EVIDENCE FOR A CHEMISORPTION-BASED GROWTH-PROCESS
    BRUNO, G
    CAPEZZUTO, P
    CICALA, G
    MANODORO, P
    TASSIELLI, V
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 1990, 18 (06) : 934 - 939
12345