Fabrication of p-type porous GaN on silicon and epitaxial GaN

被引：12

作者：

Bilousov, O. V. ^{[1
,2
]}

Geaney, H. ^{[3
,4
]}

Carvajal, J. J. ^{[1
,2
]}

Zubialevich, V. Z. ^{[4
]}

Parbrook, P. J. ^{[4
,5
]}

Giguere, A. ^{[6
]}

Drouin, D. ^{[6
]}

Diaz, F. ^{[1
,2
]}

Aguilo, M. ^{[1
,2
]}

O'Dwyer, C. ^{[3
,4
]}

机构：

[1] Univ Rovira & Virgili, Fis & Cristallog Mat & Nanomat FiCMA FiCNA, E-43007 Tarragona, Spain

[2] Univ Rovira & Virgili, EMaS, E-43007 Tarragona, Spain

[3] Natl Univ Ireland Univ Coll Cork, Dept Chem, Cork, Ireland

[4] Tyndall Natl Inst, Cork, Ireland

[5] Natl Univ Ireland Univ Coll Cork, Dept Elect & Elect Engn, Cork, Ireland

[6] Univ Sherbrooke, Interdisciplinary Inst Tech Innovat, Sherbrooke, PQ J1K 2R1, Canada

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 11期

基金：

爱尔兰科学基金会;

关键词：

YELLOW LUMINESCENCE; GALLIUM NITRIDE; PHOTOLUMINESCENCE; NANOWIRES; VACANCIES; GROWTH;

D O I：

10.1063/1.4821191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurements confirm a p-n junction commensurate with a doping density of similar to 10(18) cm(-3). Photoluminescence and cathodoluminescence confirm emission from Mg-acceptors in porous p-type GaN. (C) 2013 AIP Publishing LLC.

引用

页数：5

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