Growth of P-type GaN and AlGaN epitaxial films

被引:0
|
作者
Liu, Xianglin
Wang, Chengxin
Han, Peide
Lu, Dacheng
Wang, Xiaohui
Wang, Du
Wang, Liangchen
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:26 / 29
相关论文
共 50 条
  • [1] P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE
    Usikov, A
    Kovalenkov, O
    Ivantsov, V
    Sukhoveev, V
    Dmitriev, V
    Shmidt, N
    Poloskin, D
    Petrov, V
    Ratnikov, V
    [J]. GAN, AIN, INN AND THEIR ALLOYS, 2005, 831 : 453 - 457
  • [2] Fabrication of p-type porous GaN on silicon and epitaxial GaN
    Bilousov, O. V.
    Geaney, H.
    Carvajal, J. J.
    Zubialevich, V. Z.
    Parbrook, P. J.
    Giguere, A.
    Drouin, D.
    Diaz, F.
    Aguilo, M.
    O'Dwyer, C.
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (11)
  • [3] Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer
    Hilt, O.
    Knauer, A.
    Brunner, F.
    Bahat-Treidel, E.
    Wuerfl, J.
    [J]. 2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2010, : 347 - 350
  • [4] Structural analysis of strained p-type AlGaN/GaN superlattice
    Tsai, H. L.
    Wang, T. Y.
    Yang, J. R.
    Chuo, C. C.
    Hsu, J. T.
    Ceh, M.
    Shiojiri, M.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (02)
  • [5] Strain modification of GaN in AlGaN/GaN epitaxial films
    Steude, G
    Meyer, BK
    Göldner, A
    Hoffmann, A
    Kaschner, A
    Bechstedt, F
    Amano, H
    Akasaki, I
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5A): : L498 - L500
  • [6] Cubic AlGaN/GaN and GaN/InGaN heterostructures:: effects of p-type doping
    Rodrigues, SCP
    Sipahi, GM
    Scolfaro, LMR
    Leite, JR
    [J]. PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 74 - 77
  • [7] Strain Modification of GaN in AlGaN/GaN Epitaxial Films
    Steude, Guido
    Meyer, Bruno K.
    Goldner, Axel
    Hoffmann, Axel
    Kaschner, Axel
    Bechstedt, Friedhelm
    Amano, Hiroshi
    Akasaki, Isamu
    [J]. Japanese Journal of Applied Physics, Part 2: Letters, 1999, 38 (5 PART 2): : 498 - 500
  • [8] Influence of doping profiles on p-type AlGaN/GaN superlattices
    Waldron, E
    Graff, J
    Schubert, E
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (02): : 889 - 893
  • [9] Low resistance ohmic contacts to p-type GaN and AlGaN
    Chary, I.
    Borisov, B.
    Kuryatkov, V.
    Kudryavtsev, Yu.
    Asomoza, R.
    Nikishin, S.
    Holtz, M.
    [J]. PERFORMANCE AND RELIABILITY OF SEMICONDUCTOR DEVICES, 2009, 1108 : 169 - +
  • [10] Enhanced vertical transport in p-type AlGaN/GaN superlattices
    Kauser, MZ
    Osinsky, A
    Dabiran, AM
    Chow, PP
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (22) : 5275 - 5277