Growth of P-type GaN and AlGaN epitaxial films

被引:0
|
作者
Liu, Xianglin
Wang, Chengxin
Han, Peide
Lu, Dacheng
Wang, Xiaohui
Wang, Du
Wang, Liangchen
机构
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:26 / 29
相关论文
共 50 条
  • [31] Epitaxial ZnO growth and p-type doping with MOMBE
    Suemune, I
    Ashrafi, ABMA
    Ebihara, M
    Kurimoto, M
    Kumano, H
    Seong, TY
    Kim, BJ
    Ok, YW
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03): : 640 - 647
  • [32] Synthesis and characterization of p-type NiO films suitable for normally-off AlGaN/GaN HFETs application
    Li, Liuan
    Wang, Wenjing
    He, Mang
    Zhang, Jialin
    Wu, Zhisheng
    Zhang, Baijun
    Liu, Yang
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 67 : 141 - 146
  • [33] Optimization of p-type AlGaN/GaN and GaN/InGaN superlattice design for enhanced vertical transport
    Kauser, MZ
    Osinsky, A
    Dong, JW
    Hertog, B
    Dabiran, A
    Chow, PP
    GaN, AIN, InN and Their Alloys, 2005, 831 : 239 - 244
  • [34] Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
    Zhao, Ying
    Xu, Shengrui
    Tao, Hongchang
    Zhang, Yachao
    Zhang, Chunfu
    Feng, Lansheng
    Peng, Ruoshi
    Fan, Xiaomeng
    Du, Jinjuan
    Zhang, Jincheng
    Hao, Yue
    MATERIALS, 2021, 14 (01) : 1 - 7
  • [35] The growth of p-type epitaxial GaN films on sapphire substrates in a production scale multi-wafer rotating disc MOCVD reactor
    Yuan, C
    Salagaj, T
    Gurary, A
    Kroll, W
    Stall, RA
    Hwang, CY
    Schurman, M
    Li, Y
    Mayo, WE
    Lu, Y
    Krishnankutty, S
    Kolbas, RM
    Pearton, SJ
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 855 - 858
  • [36] Design and Growth of P-Type AlGaN Graded Composition Superlattice
    Liu, Yang
    Yang, Xue
    Zhou, Xiaowei
    Li, Peixian
    Yang, Bo
    Zhao, Zhuang
    Xiang, Yingru
    Bai, Junchun
    MICROMACHINES, 2024, 15 (12)
  • [37] VT - VSUB Characterization of AlGaN/GaN HFET With p-Type Body Layer
    Hu, Cheng-Yu
    Kikuta, Daigo
    Sugimoto, Masahiro
    Ao, Jin-Ping
    Ohno, Yasuo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (12) : 4265 - 4271
  • [38] PHOTOLUMINESCENCE PARAMETERS OF EPITAXIAL P-TYPE GALLIUM ANTIMONIDE FILMS
    ZIMOGOROVA, NS
    KANSKAYA, LM
    KRYACHKO, IV
    SAZONOV, VA
    SHOSTKA, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (12): : 1427 - 1428
  • [39] Transparent p-type epitaxial thin films of nickel oxide
    Zhai, Pengfei
    Yi, Qinghua
    Jian, Jie
    Wang, Haiyan
    Song, Pingyuan
    Dong, Chao
    Lu, Xin
    Sun, Yinghui
    Zhao, Jie
    Dai, Xiao
    Lou, Yanhui
    Yang, Hao
    Zou, Guifu
    CHEMICAL COMMUNICATIONS, 2014, 50 (15) : 1854 - 1856
  • [40] Growth and characterization of ZnO nanowires on p-type GaN
    Robin, I. C.
    Lafossas, M.
    Garcia, J.
    Rosina, M.
    Latu-Romain, E.
    Ferret, P.
    Gilet, P.
    Tchelnokov, A.
    Azize, M.
    Eymery, J.
    Feuillet, G.
    MICROELECTRONICS JOURNAL, 2009, 40 (02) : 250 - 252