P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE

被引：0

作者：

Usikov, A ^{[1
]}

Kovalenkov, O ^{[1
]}

Ivantsov, V ^{[1
]}

Sukhoveev, V ^{[1
]}

Dmitriev, V ^{[1
]}

Shmidt, N ^{[1
]}

Poloskin, D ^{[1
]}

Petrov, V ^{[1
]}

Ratnikov, V ^{[1
]}

机构：

[1] Technol & Devices Int Inc, Silver Spring, MD 20904 USA

来源：

GAN, AIN, INN AND THEIR ALLOYS | 2005年 / 831卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper we report p-GaN growth by hydride vapor phase epitaxy (HVPE) on sapphire substrates. Mg or Zn impurities were used for doping. Layer thickness ranged from 2 to 5 microns. For both impurities, as-grown GaN layers had p-type conductivity. Concentration NA-N-D was varied from 10(16) to 10(18) cm(-3). An annealing procedure at 750 degrees C in argon ambient typically increased the concentration N-A-N-D in 1.5-3.5 times. For Mg doped GaN layers, room temperature hole mobility of 80 cm(2)V(-1)s(-1) was measured by conventional Van Der Pau Hall effect technique for material having hole concentration of about 1x10(18) cm(-3). Initial results on highly electrically conducting p-type AlGaN/GaN heterostructures doped with Zn are also reported.

引用

页码：453 / 457

页数：5

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