Electrical and optical properties of thick highly doped p-type GaN layers grown by HVPE

被引：26

作者：

Usikov, A. ^{[1
]}

Kovalenkov, O. ^{[1
]}

Soukhoveev, V. ^{[1
]}

Ivantsov, V. ^{[1
]}

Syrkin, A. ^{[1
]}

Dmitriev, V. ^{[1
]}

Nikiforov, A. Yu. ^{[2
]}

Sundaresan, S. G. ^{[3
]}

Jeliazkov, S. J. ^{[4
]}

Davydov, A. V. ^{[4
]}

机构：

[1] Technol & Devices Int Inc, 12214 Plum Orchard Dr, Silver Spring, MD 20904 USA

[2] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[3] George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22030 USA

[4] NIST, Gaithersburg, MD 20899 USA

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

D O I：

10.1002/pssc.200778685

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper we report 3-7 mu m thick p-GaN growth by hydride vapor phase epitaxy (HVPE) on sapphire substrates. Mg impurity was used for doping. As-grown GaN layers had p-type conductivity with concentration N-A-N-D up to 3x10(19) cm(-3). Mg atom concentration was varied from 10(17) to 10(20) cm(-3). Hydrogen concentration was about 10 times less than that for Mg, which may explain effective p-type doping for as-grown GaN layers. Micro-cathodoluminescence revealed a columnar-like structure of the GaN layers with a non-uniform distribution of material regions having dominant 362 nm or 430 nm luminescence. Use of these thick p-GaN layers to grow InGaN-based blue and green LEDs by the HVPE is demonstrated.

引用

页码：1829 / +

页数：2

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