Electrical and optical properties of thick highly doped p-type GaN layers grown by HVPE

被引：26

作者：

Usikov, A. ^{[1
]}

Kovalenkov, O. ^{[1
]}

Soukhoveev, V. ^{[1
]}

Ivantsov, V. ^{[1
]}

Syrkin, A. ^{[1
]}

Dmitriev, V. ^{[1
]}

Nikiforov, A. Yu. ^{[2
]}

Sundaresan, S. G. ^{[3
]}

Jeliazkov, S. J. ^{[4
]}

Davydov, A. V. ^{[4
]}

机构：

[1] Technol & Devices Int Inc, 12214 Plum Orchard Dr, Silver Spring, MD 20904 USA

[2] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[3] George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22030 USA

[4] NIST, Gaithersburg, MD 20899 USA

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

D O I：

10.1002/pssc.200778685

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper we report 3-7 mu m thick p-GaN growth by hydride vapor phase epitaxy (HVPE) on sapphire substrates. Mg impurity was used for doping. As-grown GaN layers had p-type conductivity with concentration N-A-N-D up to 3x10(19) cm(-3). Mg atom concentration was varied from 10(17) to 10(20) cm(-3). Hydrogen concentration was about 10 times less than that for Mg, which may explain effective p-type doping for as-grown GaN layers. Micro-cathodoluminescence revealed a columnar-like structure of the GaN layers with a non-uniform distribution of material regions having dominant 362 nm or 430 nm luminescence. Use of these thick p-GaN layers to grow InGaN-based blue and green LEDs by the HVPE is demonstrated.

引用

页码：1829 / +

页数：2

共 50 条

[31] Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE
Witte, H
Krtschil, A
Lisker, M
Krost, A
Christen, J
Kuhn, B
Scholz, F
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 85 - 87
[32] ELECTRICAL AND OPTICAL-PROPERTIES OF LI-DOPED MBE-GROWN P-TYPE ZNSE FILMS
HINGERL, K
SITTER, H
LILJA, J
KUUSISTO, E
IMAI, K
PESSA, M
KUDLEK, G
GUTOWSKI, J
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (9A) : A72 - A75
[33] Defect and emission distributions in thick HVPE-GaN layers grown on PENDEO templates
Valcheva, E
Paskova, T
Monemar, B
Roskowski, AM
Davis, RF
[J]. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2424 - 2427
[34] Electrical and optical characterization of GaN HVPE layers related to extended defects
Castaldini, A
Cavallini, A
Polenta, L
Díaz-Guerra, C
Piqueras, J
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (48) : 13095 - 13104
[35] Optical and electrical properties of p-type Ag-doped ZnO nanostructures
Khosravi-Gandomani, Sara
Yousefi, Ramin
Jamali-Sheini, Farid
Huang, Nay Ming
[J]. CERAMICS INTERNATIONAL, 2014, 40 (06) : 7957 - 7963
[36] Ag doped p-type ZnO films and its optical and electrical properties
Wang, Jing-Wei
Bian, Ji-Ming
Sun, Jing-Chang
Liang, Hong-Wei
Zhao, Jian-Ze
Du, Guo-Tong
[J]. Wuli Xuebao/Acta Physica Sinica, 2008, 57 (08): : 5212 - 5216
[37] Highly doped p-type a-plane GaN grown on r-plane sapphire substrate
Tsuchiya, Y.
Okadome, Y.
Furukawa, H.
Honshio, A.
Miyake, Y.
Kawashima, T.
Iwaya, M.
Kamiyama, S.
Amano, H.
Akasaki, I.
[J]. GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 423 - +
[38] Ag doped p-type ZnO films and its optical and electrical properties
Wang Jing-Wei
Bian Ji-Ming
Sun Jing-Chang
Liang Hong-Wei
Zhao Jian-Ze
Du Guo-Tong
[J]. ACTA PHYSICA SINICA, 2008, 57 (08) : 5212 - 5216
[39] Electrical and optical properties of p-type InN
Mayer, Marie A.
Choi, Soojeong
Bierwagen, Oliver
Smith, Holland M., III
Haller, Eugene E.
Speck, James S.
Walukiewicz, Wladek
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)
[40] Electrical and optical properties of p-type InGaN
Pantha, B. N.
Sedhain, A.
Li, J.
Lin, J. Y.
Jiang, H. X.
[J]. APPLIED PHYSICS LETTERS, 2009, 95 (26)

← 1 2 3 4 5 →