High hole concentration of p-type InGaN epitaxial layers grown by MOCVD

被引：21
|
作者：
Chen, PC
Chen, CH
Chang, SJ [1 ]
Su, YK
Chang, PC
Huang, BR
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan
[4] Natl Yunlin Univ Sci & Technol, Inst Elect Engn, Yunlin, Taiwan
来源：
THIN SOLID FILMS | 2006年 / 498卷 / 1-2期
关键词：
InGaN; MOCVD; PL; tunneling contact layer; LED; hole concentration; operating voltage;
D O I：
10.1016/j.tsf.2005.07.084
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical and optical properties of Mg-doped InxGa1-xN were investigated herein. With an In mole fraction increase, the RT carrier concentration was increased exponentially. Compared to Mg-doped GaN layers, it was found that we could achieve a high (1.65 x 10(19) cm(-3)) hole concentration from the p-type InGaN with an indium content of 0.23. InGaN/GaN MQW blue LEDs without and with a 5-nm-thick p-type In0.23Ga0.77N contact layer were also successfully fabricated. We could reduce the 20 mA operation voltage from 3.78 V to 3.37 V by introducing a 5-nm-thick In0.23Ga0.77N layer on top of the p-type GaN layer and improve the blue LED EL intensity and output power by employing such a p-In0.23Ga0.77N layer. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：113 / 117
页数：5
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