MORPHOLOGY OF GAAS EPITAXIAL LAYERS GROWN BY MOCVD

被引：17
|
作者：
MORI, H [1 ]
TAKAGISHI, S [1 ]
机构：
[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1984年 / 69卷 / 01期
关键词：
D O I：
10.1016/0022-0248(84)90005-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：23 / 28
页数：6
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