LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

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作者：
MALLARD, RE
WILSHAW, PR
MASON, NJ
WALKER, PJ
BOOKER, GR
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MICROSCOPY OF SEMICONDUCTING MATERIALS 1989 | 1989年 / 100卷
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T [工业技术];
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08 ;
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页码：331 / 336
页数：6
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