Persistent photoconductivity in p-type GaN epilayers and n-type AlGaN/GaN heterostructures

被引：0
|
作者：
Li, JZ
Lin, JY
Jiang, HX
Khan, MA
Chen, Q
Salvador, A
Botchkarev, A
Morkoc, H
机构：
来源：
III-V NITRIDES | 1997年 / 449卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Persistent photoconductivity (PPC) effect has been observed in p-type GaN epilayers grown both by metal-organic chemical vapor deposition (MOCVD) and reactive molecular beam epitaxy (MBE) as well as in a two-dimensional electron gas (2DEG) system formed by an AlGaN/GaN heterostructure grown by MOCVD. Its properties have been investigated at different conditions.
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页码：537 / 542
页数：6
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