Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures

被引：3
|
作者：
Buyanov, AV [1 ]
Bergman, JP
Sandberg, JA
Sernelius, BE
Holtz, PO
Dalfors, J
Monemar, B
Amano, H
Akasaki, I
机构：
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷
关键词：
heterostructures; photoconductivity; photoluminescence; fluctuations; disorder;
D O I：
10.1016/S0022-0248(98)00282-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Photoluminescence and photoconductivity data from GaN/AlGaN modulation doped heterostructures, in temperature interval between 2 and 250 K, are presented. The results show a strong influence of potential fluctuations on both optical spectra and photo-induced transport. The electric field fluctuations in the interface region of the two-dimensional electron gas is estimated to be in the several kV cm(-1) range, sufficient to ionize the excitons. Persistent photoconductivity effects may be related to the same fluctuations in these structures. (C) 1998 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：753 / 757
页数：5
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