Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures

被引：36
|
作者：
Hsu, L [1 ]
Walukiewicz, W
机构：
[1] Carnegie Mellon Univ, Ctr Innovat Learning, Pittsburgh, PA 15213 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 17期
关键词：
D O I：
10.1063/1.123897
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have calculated hole transfer and low-temperature mobilities in p-type GaN/AlGaN modulation-doped heterostructures. Although substantial p-type conduction is difficult to achieve in bulk nitrides, the strain-induced polarization field can greatly enhance the transfer of holes from relatively deep Mg acceptors in the AlGaN barrier into the GaN well. The calculations predict formation of a two-dimensional hole gas with densities greater than 10(12) cm(-2) and with low-temperature mobilities in excess of 10(4) cm(2)/V s. (C) 1999 American Institute of Physics. [S0003-6951(99)01717-9].
引用
收藏
页码：2405 / 2407
页数：3
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