Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures

被引:36
|
作者
Hsu, L [1 ]
Walukiewicz, W
机构
[1] Carnegie Mellon Univ, Ctr Innovat Learning, Pittsburgh, PA 15213 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1063/1.123897
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have calculated hole transfer and low-temperature mobilities in p-type GaN/AlGaN modulation-doped heterostructures. Although substantial p-type conduction is difficult to achieve in bulk nitrides, the strain-induced polarization field can greatly enhance the transfer of holes from relatively deep Mg acceptors in the AlGaN barrier into the GaN well. The calculations predict formation of a two-dimensional hole gas with densities greater than 10(12) cm(-2) and with low-temperature mobilities in excess of 10(4) cm(2)/V s. (C) 1999 American Institute of Physics. [S0003-6951(99)01717-9].
引用
收藏
页码:2405 / 2407
页数:3
相关论文
共 50 条
  • [1] Weakly localized transport in modulation-doped GaN/AlGaN heterostructures
    Buyanov, AV
    Sandberg, JA
    Sernelius, BE
    Holtz, PO
    Bergman, JP
    Monemar, B
    Amano, H
    Akasaki, I
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 758 - 762
  • [2] Improved Mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices
    Waldron, EL
    Graff, JW
    Schubert, EF
    Dabiran, AM
    [J]. GAN AND RELATED ALLOYS-2001, 2002, 693 : 823 - 828
  • [3] Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices
    Waldron, EL
    Graff, JW
    Schubert, EF
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (17) : 2737 - 2739
  • [4] Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures
    Cao, JC
    Yao, W
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (01): : 50 - 53
  • [5] Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures
    Buyanov, AV
    Bergman, JP
    Sandberg, JA
    Sernelius, BE
    Holtz, PO
    Dalfors, J
    Monemar, B
    Amano, H
    Akasaki, I
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 753 - 757
  • [6] Electron mobility in modulation-doped AlGaN-GaN heterostructures
    Gaska, R
    Shur, MS
    Bykhovski, AD
    Orlov, AO
    Snider, GL
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (02) : 287 - 289
  • [7] P-TYPE MODULATION-DOPED HGCDTE
    HAN, JW
    HWANG, S
    LANSARI, Y
    HARPER, RL
    YANG, Z
    GILES, NC
    COOK, JW
    SCHETZINA, JF
    SEN, S
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (01) : 63 - 65
  • [8] Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures
    Dziuba, Z
    Antoszewski, J
    Dell, JM
    Faraone, L
    Kozodoy, P
    Keller, S
    Keller, B
    DenBaars, SP
    Mishra, UK
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) : 2996 - 3002
  • [9] Very high hole mobility in p-type Si/SiGe modulation-doped heterostructures
    Tsai, WC
    Chang, CY
    Huang, GW
    Fang, FF
    Chang, YH
    Huang, CF
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (3B): : L323 - L326
  • [10] Dislocation scattering effect on two-dimensional electron gas transport in GaN/AlGaN modulation-doped heterostructures
    Gökden, S
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 23 (1-2): : 19 - 25