Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures

被引：36

作者：

Hsu, L ^{[1
]}

Walukiewicz, W

机构：

[1] Carnegie Mellon Univ, Ctr Innovat Learning, Pittsburgh, PA 15213 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 17期

关键词：

D O I：

10.1063/1.123897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have calculated hole transfer and low-temperature mobilities in p-type GaN/AlGaN modulation-doped heterostructures. Although substantial p-type conduction is difficult to achieve in bulk nitrides, the strain-induced polarization field can greatly enhance the transfer of holes from relatively deep Mg acceptors in the AlGaN barrier into the GaN well. The calculations predict formation of a two-dimensional hole gas with densities greater than 10(12) cm(-2) and with low-temperature mobilities in excess of 10(4) cm(2)/V s. (C) 1999 American Institute of Physics. [S0003-6951(99)01717-9].

引用

页码：2405 / 2407

页数：3

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