Defect formation and recombination processes in p-type modulation-doped Si epilayers

被引：0
|
作者：
Buyanova, IA [1 ]
Chen, WM [1 ]
Henry, A [1 ]
Ni, WX [1 ]
Hansson, GV [1 ]
Monemar, B [1 ]
机构：
[1] UKRAINIAN ACAD SCI,INST SEMICOND PHYS,KIEV 252650,UKRAINE
来源：
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷
关键词：
silicon; defects; modulation-doping; photoluminescence;
D O I：
10.4028/www.scientific.net/MSF.196-201.479
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A strong effect of p-type modulation-doping on the radiative recombination in Si epilayers, grown by the Molecular Beam Epitaxy (MBE) technique, is observed by photoluminescence (Pi,) spectroscopy. The recombination between the two-dimensional hole gas (2DHG) confined in the doped regions and nearby electrons gives rise to two asymmetric PL bands near the Si band edge when the doping level exceeds the degenerate limit. Non-optimised growth conditions, in particular involvement of ion-bombardment during the growth, are proved to be responsible for the quenching of the 2DHG related emissions. Radiation-induced defects with the participation of doping impurities give rise to both broad band PL emission and sharp excitonic lines.
引用
收藏
页码：479 / 483
页数：5
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