Dislocation scattering effect on two-dimensional electron gas transport in GaN/AlGaN modulation-doped heterostructures

被引:8
|
作者
Gökden, S [1 ]
机构
[1] Balikesir Univ, Dept Phys, TR-10100 Balikesir, Turkey
来源
关键词
dislocation scattering; GaN/AlGaN; MDH; transport and quantum lifetime;
D O I
10.1016/j.physe.2003.11.272
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We present the effect of all standard scattering mechanisms, including scattering by acoustic and optical phonons, remote and background impurities and dislocation, on two-dimensional electron gas (2DEG) transport in AlGaN/GaN modulation doped-heterostructures. The most important scattering mechanisms limiting electron transport are identified. From the calculated dependence of mobility on temperature, it is clear that dislocation scattering dominates the low-temperature mobility of two-dimensional electrons in GaN/AlGaN structures with a high electron density n(s) > 10(12) cm(-2) and the maximum 2DEG mobilities will be in the 10(2)-10(4) cm(2)/V s range for dislocation density of 4 x 10(10) cm(-2) and carrier densities in the 1 x 10(12) -2 x 10(13) cm(-2). This theoretical calculations fairly agree with the same mobility value obtained by the experimental for 4 x 10(10) cm(-2) dislocation density. The results are compared to the transport to quantum lifetime ratios due to charge dislocations. We find that the ratio is larger for dislocation scattering than for impurity scattering. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:19 / 25
页数:7
相关论文
共 50 条
  • [1] Spin splitting in modulation-doped AlGaN/GaN two-dimensional electron gas
    Tsubaki, K
    Maeda, N
    Saitoh, T
    Kobayashi, N
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (17) : 3126 - 3128
  • [2] Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas
    Protasov, D. Yu.
    Malin, T. V.
    Tikhonov, A. V.
    Tsatsulnikov, A. F.
    Zhuravlev, K. S.
    [J]. SEMICONDUCTORS, 2013, 47 (01) : 33 - 44
  • [3] Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas
    D. Yu. Protasov
    T. V. Malin
    A. V. Tikhonov
    A. F. Tsatsulnikov
    K. S. Zhuravlev
    [J]. Semiconductors, 2013, 47 : 33 - 44
  • [4] Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures
    Cao, JC
    Yao, W
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (01): : 50 - 53
  • [5] Two-dimensional electron transport in AlGaN/GaN heterostructures
    Tan, Ren-Bing
    Xu, Wen
    Zhou, Yu
    Zhang, Xiao-Yu
    Qin, Hua
    [J]. PHYSICA B-CONDENSED MATTER, 2012, 407 (21) : 4277 - 4280
  • [6] Two-dimensional electron gas in AlGaN/GaN heterostructures
    Li, JZ
    Lin, JY
    Jiang, HX
    Khan, MA
    Chen, Q
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 1117 - 1120
  • [7] Transport Properties of Two-dimensional Electron Gas in Cubic AlGaN/GaN Heterostructures
    Feng, Qian
    Shi, Peng
    Zhao, Jie
    Du, Kai
    Li, Yu-kun
    Feng, Qing
    Hao, Yue
    [J]. EIGHTH CHINA NATIONAL CONFERENCE ON FUNCTIONAL MATERIALS AND APPLICATIONS, 2014, 873 : 777 - +
  • [8] Weakly localized transport in modulation-doped GaN/AlGaN heterostructures
    Buyanov, AV
    Sandberg, JA
    Sernelius, BE
    Holtz, PO
    Bergman, JP
    Monemar, B
    Amano, H
    Akasaki, I
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 758 - 762
  • [9] Electron mobility in modulation-doped AlGaN-GaN heterostructures
    Gaska, R
    Shur, MS
    Bykhovski, AD
    Orlov, AO
    Snider, GL
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (02) : 287 - 289
  • [10] Mobility of two-dimensional electrons in an AlGaN/GaN modulation-doped heterostructure
    Gökden, S
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 200 (02): : 369 - 377