Two-dimensional electron transport in AlGaN/GaN heterostructures

被引：4
|
作者：
Tan, Ren-Bing [2 ,3 ,4 ]
Xu, Wen [1 ]
Zhou, Yu [2 ]
Zhang, Xiao-Yu [2 ]
Qin, Hua [2 ]
机构：
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215125, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[4] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2012年 / 407卷 / 21期
基金：
中国国家自然科学基金;
关键词：
Two-dimensional electron gas; GaN; Drift velocity; Electron temperature; SEMICONDUCTORS; SCATTERING; MOBILITY; DIODES; GAN;
D O I：
10.1016/j.physb.2012.07.017
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present a theoretical study of electron transport properties of two-dimensional electron gas in AlGaN/GaN heterostructures. By assuming a drifted Fermi-Dirac distribution and taking into account all major scattering mechanisms, including polar optical and acoustic phonons, background impurities, dislocation and interface roughness, the momentum- and energy-balance equations derived from Boltzmann equation are solved self-consistently. The dependence of the electron drift velocity and electron temperature as a function of the applied electric field are obtained and discussed. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：4277 / 4280
页数：4
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