Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures

被引:8
|
作者
Umana-Membreno, G. A. [1 ]
Fehlberg, T. B. [1 ]
Kolluri, S. [2 ]
Brown, D. F. [2 ]
Keller, S. [2 ]
Mishra, U. K. [2 ]
Nener, B. D. [1 ]
Faraone, L. [1 ]
Parish, G. [1 ]
机构
[1] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
基金
澳大利亚研究理事会;
关键词
MOBILITY-SPECTRUM ANALYSIS;
D O I
10.1063/1.3595341
中图分类号
O59 [应用物理学];
学科分类号
摘要
Magnetic-field dependent Hall-effect measurements and mobility spectrum analysis were employed to study anisotropic transport in N-polarGaN/Al(0.3)Ga(0.7)N heterostructures grown on vicinal sapphire substrates. The significant anisotropy in the mobility in the parallel and perpendicular directions to the miscut direction was accompanied by a slight anisotropy in charge density. A single electron species was found in the direction parallel to the steps resulting from growth on the vicinal substrates; while in the perpendicular direction two distinct electrons peaks were evident at T <= 150 K. The lower average mobility in the perpendicular direction is attributed to interface roughness scattering. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595341]
引用
收藏
页数:3
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