Two-dimensional electron dynamics in GaN/AlGaN heterostructures

被引:0
|
作者
Vitusevich, SA [1 ]
Danylyuk, SV [1 ]
Klein, N [1 ]
Petrychuk, MV [1 ]
Avksentyev, AY [1 ]
Sokolov, VN [1 ]
Kochelap, VA [1 ]
Belyaev, AE [1 ]
Tilak, V [1 ]
Smart, J [1 ]
Vertiatchikh, A [1 ]
Eastman, LF [1 ]
机构
[1] Forschungszentrum Julich, Inst Schichten & Grenzflachen, D-52425 Julich, Germany
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中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This report addresses the study of two-dimensional electron gas (2DEG) transport at low and moderate electric fields. The devices under study are group-III nitride-based (AlGaN/GaN) gateless heterostructures grown on sapphire for HEMT applications. The transmission line model (TLM) patterns of different channel lengths L and the same channel width are used. We have developed a simple theoretical model to adequately describe the observed peculiarities in the I-V characteristics measured in steady-state and pulsed (10(-6) s) regimes. The effect of Joule heating of a heterostructure is clearly distinguished. The thermal impedances and the channel temperature rise caused by the Joule self-heating have been extracted for the devices of different L at different values of dissipated power.
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页码:401 / 404
页数:4
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