Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures

被引：0
|
作者：
Dunford, RB
Ahmed, A
Paul, DJ
Pepper, M
Churchill, AC
Robbins, DJ
Pidduck, AJ
机构：
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Def Evaluat & Res Agcy, Elect Sector, Malvern WR14 3PS, Worcs, England
来源：
MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1016/S0167-9317(00)00297-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Inverted n-type modulated-doped Si/Si0.77Ge0.23 heterostructures have been prepared using ex-situ ion implantation of a virtual substrate for the doping followed by cleaning and the regrowth of the silicon quantum well in the growth system. At 1.7K sample mobilities of 1.5-7.3x10(4)cm(2)/Vs and carrier densities of 4.25-14.51x10(11)cm(-2) were obtained. The sample mobility was observed to decrease with increasing ion dose land carrier density). Clear Shubnikov-de Haas oscillations and quantum Hall effect plateaux were visible, demonstrating the quality of the technique.
引用
收藏
页码：205 / 208
页数：4
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