Persistent Photoconductivity in n-type GaN

被引：0
|
作者：
DENG Dong-mei 1
2. State Key Laboratory on Integrated Optoelectronics
3. Department of Physics
机构：
来源：
SemiconductorPhotonicsandTechnology | 2006年 / 02期
关键词：
MOCVD; GaN; DCXRD; Photoluminescence;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
摘要：
The persistent photoconductivity(PPC) phenomena in n-type GaN Films grown by metalorganic chemical vapor deposition(MOCVD) have been studied. After using some testing and analysis methods, such as the double crystal X-ray diffraction(DCXRD), the photoluminescence(PL) spectra, etc, it is found that the issue which influences PPC in n-type GaN is not relative to the dislocations and yellow band(YB), and is caused by the doping level of Si most likely.
引用
收藏
页码：77 / 80
页数：4
相关论文
共 50 条
  • [1] Persistent photoconductivity in n-type GaN
    Chen, HM
    Chen, YF
    Lee, MC
    Feng, MS
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (02) : 899 - 901
  • [2] Persistent photoconductivity in n-type GaN
    Hirsch, MT
    Wolk, JA
    Walukiewicz, W
    Haller, EE
    APPLIED PHYSICS LETTERS, 1997, 71 (08) : 1098 - 1100
  • [3] Persistent photoconductivity in n-type GaN
    Wickenden, AE
    Beadie, G
    Koleske, DD
    Rabinovich, WS
    Freitas, JA
    III-V NITRIDES, 1997, 449 : 531 - 536
  • [4] Photoquenching of persistent photoconductivity in n-type GaN
    Hirsch, MT
    Seifert, O
    Kirfel, O
    Parisi, J
    Wolk, JA
    Walukiewicz, W
    Haller, EE
    Ambacher, O
    Stutzmann, M
    NITRIDE SEMICONDUCTORS, 1998, 482 : 531 - 536
  • [5] Yellow luminescence and persistent photoconductivity of undoped n-type GaN
    Chung, SJ
    Cha, OH
    Kim, YS
    Hong, CH
    Lee, HJ
    Jeong, MS
    White, JO
    Suh, EK
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) : 5454 - 5459
  • [6] Contribution of hole trap to persistent photoconductivity in n-type GaN
    Cai, S
    Parish, G
    Dell, JM
    Nener, BD
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (02) : 1019 - 1023
  • [7] Yellow luminescence and persistent photoconductivity of undoped n-type GaN
    1600, (American Institute of Physics Inc.):
  • [8] Contribution of hole trap to persistent photoconductivity in n-type GaN
    Cai, S., 1600, American Institute of Physics Inc. (96):
  • [9] Persistent photoconductivity in p-type GaN epilayers and n-type AlGaN/GaN heterostructures
    Li, JZ
    Lin, JY
    Jiang, HX
    Khan, MA
    Chen, Q
    Salvador, A
    Botchkarev, A
    Morkoc, H
    III-V NITRIDES, 1997, 449 : 537 - 542
  • [10] Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures
    Dang, XZ
    Wang, CD
    Yu, ET
    Boutros, KS
    Redwing, JM
    APPLIED PHYSICS LETTERS, 1998, 72 (21) : 2745 - 2747
12345