Contribution of hole trap to persistent photoconductivity in n-type GaN

被引：21
|
作者：
Cai, S [1 ]
Parish, G [1 ]
Dell, JM [1 ]
Nener, BD [1 ]
机构：
[1] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 02期
关键词：
D O I：
10.1063/1.1760840
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The transient behavior of persistent photoconductivity (PPC) in unintentionally doped GaN has been investigated for different excitation intensities and at different temperatures. The observed PPC buildup behavior can be described by a sum of two exponential functions with a long and a short time constant, which are attributed separately to the contributions of an electron trap and a hole trap, respectively. The concentrations of the electron trap and hole trap at 300 K are 1.6x10(15) and 2.6x10(15) cm(-3), with a thermal activation energy level of 195.5 and 111.6 meV, respectively. Temperature dependence of the PPC buildup processes indicates that from 340 K down to about 240 K the rate parameters associated with the PPC buildup are dominated by the thermally activated capture mechanisms of defects. In contrast they are nearly independent of temperature below 240 K. (C) 2004 American Institute of Physics.
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页码：1019 / 1023
页数：5
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