Persistent Photoconductivity in n-type GaN

被引：0
|
作者：
DENG Dong-mei 1
2. State Key Laboratory on Integrated Optoelectronics
3. Department of Physics
机构：
来源：
SemiconductorPhotonicsandTechnology | 2006年 / 02期
关键词：
MOCVD; GaN; DCXRD; Photoluminescence;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
摘要：
The persistent photoconductivity(PPC) phenomena in n-type GaN Films grown by metalorganic chemical vapor deposition(MOCVD) have been studied. After using some testing and analysis methods, such as the double crystal X-ray diffraction(DCXRD), the photoluminescence(PL) spectra, etc, it is found that the issue which influences PPC in n-type GaN is not relative to the dislocations and yellow band(YB), and is caused by the doping level of Si most likely.
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页码：77 / 80
页数：4
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