Photoelectrochemical properties of p-type GaN in comparison with n-type GaN

被引：80
|
作者：
Fujii, K [1 ]
Ohkawa, K [1 ]
机构：
[1] Sci Univ Tokyo, Dept Appl Phys, Japan Sci & Technol Agcy, Nakamura Inhomogeneous Crystal Project,Shinju ku, Tokyo 1628601, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 28-32期
关键词：
gallium nitride; semiconductor-electrolyte contacts; photoelectrochemical cells; photoelectrolysis; p-type;
D O I：
10.1143/JJAP.44.L909
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the Mott-Schottky plot, and we clarified the potentials to be identical to those of n-type GaN. Photocurrent in p-type GaN shows its potential as an electrode for photoelectrolysis of water.
引用
收藏
页码：L909 / L911
页数：3
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