Optical, electrical and lifetime characterization of in-grown stacking faults in 4H-SiC

被引：0

作者：

Caldwell, Joshua David ^{[1
]}

Klein, Paul B. ^{[1
]}

Glembocki, Orest J. ^{[1
]}

Stahlbush, Robert E. ^{[1
]}

Liu, Kendrick X. ^{[1
]}

Hobart, Karl D. ^{[1
]}

Kub, Fritz ^{[1
]}

机构：

[1] Naval Res Lab, Div Elect Sci & Technol, 4555 Overlook Ave SW, Washington, DC 20375 USA

来源：

SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES | 2006年 / 911卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Here we present optical beam induced current, electroluminescence, time resolved photoluminescence and current-voltage measurements on several 4H-SiC PiN diodes containing in-grown stacking faults (IGSFs). These defects were observed to act as either current shorts, creating a direct electrical contact between the p+ and n+ layers, or as a current barrier. Carrier lifetime measurements verify that the change in behavior is indeed associated with changes in the conductivity of the material in the vicinity of the defect and not due to local changes in the carrier lifetime. The IGSFs discussed here appear to differ from those previously discussed in the literature and may constitute a new, multi-layered IGSF.

引用

页码：187 / +

页数：2

共 50 条

[21] Optical properties of as-grown and process-induced stacking faults in 4H-SiC
Camassel, J.
Juillaguet, S.
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (07): : 1337 - 1355
[22] Non-destructive observation of in-grown stacking faults in 4H-SiC epitaxial layer using mirror electron microscope
Hasegawa, Masaki
Ohno, Toshiyuki
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (07)
[23] Structure analysis of in-grown stacking faults and investigation of the cause for high reverse current of 4H-SiC Schottky Barrier Diode
Harada, Shin
Namikawa, Yasuo
Sugie, Ryuichi
[J]. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 963 - +
[24] Single Shockley Stacking Faults in as-grown 4H-SiC Epilayers
Hassan, J.
Bergman, J. P.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 327 - 330
[25] Micro-Raman characterization of 4H-SiC stacking faults
20141217488076
[J]. (1) IMM-CNR, Z.I. VIII Strada, 5, 95121, Catania, Italy, 1600, Cree Inc.; et al; Mitsubishi Electric Corporation; Research Institute for Applied Sciences; The Japan Society of Applied Physics; Tokyo Electron Limited (Trans Tech Publications Ltd): : 778 - 780
[26] Micro-Raman characterization of 4H-SiC stacking faults
Piluso, N.
Camarda, M.
Anzalone, R.
La Via, F.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 378 - 381
[27] Investigation of in-grown dislocations in 4H-SiC epitaxial layers
Kojima, K.
Kato, T.
Kuroda, S.
Okumura, H.
Arai, K.
[J]. SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 147 - +
[28] Stacking Faults in 4H-SiC Single Crystal
Zhao Ning
Liu Chun-Jun
Wang Bo
Peng Tong-Hua
[J]. JOURNAL OF INORGANIC MATERIALS, 2018, 33 (05) : 540 - 544
[29] Stacking faults in 4H-SiC epilayers and IGBTs
Wang, Pin
Cheng, Weiwei
Li, Yifei
Xu, Lei
Hou, Pengxiang
Yu, Le
Li, Yun
Li, Zheyang
Jin, Rui
[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 177
[30] Combined structural and optical studies of stacking faults in 4H-SiC layers grown by chemical vapour deposition
Marinova, Maya
Robert, Teddy
Juillaguet, Sandrine
Tsiaoussis, Ioannis
Frangis, Nikolaos
Polychroniadis, Efstathios
Camassel, Jean
Chassagne, Thierry
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (08): : 1924 - 1930

← 1 2 3 4 5 →