Single Shockley Stacking Faults in as-grown 4H-SiC Epilayers

被引：4
|
作者：
Hassan, J. [1 ]
Bergman, J. P. [1 ]
机构：
[1] Linkoping Univ, IFM, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷
关键词：
SiC; Stacking Faults; Photoluminescence; Carrier Lifetime;
D O I：
10.4028/www.scientific.net/MSF.645-648.327
中图分类号：
TB33 [复合材料];
学科分类号：
摘要：
An extended structural defects which locally drastically reduces the carrier lifetime, has been observed in as-grown epilayers. A combination of back polishing, etching in molten KOH and optical microscopy revealed the geometrical structure of the stacking fault inside the epilayer. The fault started close to the epi-substrate interface, expanded initially rapidly but changed geometry after some time and reduced in size during further growth. The optical spectrum as well as the temperature dependence from this fault is identical to the emission from the single Shockley stacking faults previously only observed and formed in the bipolar diodes during forward voltage operation.
引用
收藏
页码：327 / 330
页数：4
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