Observations of Overlapped Single Shockley Stacking Faults in 4H-SiC PiN Diode

被引：2

作者：

Nakayama, K. ^{[1
]}

Hemmi, T. ^{[1
]}

Asano, K. ^{[1
]}

Miyazawa, T. ^{[2
]}

Tsuchida, H. ^{[2
]}

机构：

[1] Kansai Elect Power Co Inc, Power Engn R&D Ctr, Amagasaki, Hyogo 6610974, Japan

[2] Cent Res Inst Elect Power Ind, Mat Sci Res Lab, Yokosuka, Kanagawa 2400196, Japan

来源：

ACTA PHYSICA POLONICA A | 2014年 / 125卷 / 04期

基金：

日本学术振兴会;

关键词：

D O I：

10.12693/APhysPolA.125.962

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In 4H-SiC PiN diodes, Shockley-type stacking faults expand from basal plane dislocations under conducting forward current. We report for the first time overlapped single Shockley-type stacking faults in a 4H-SiC PiN diode after forward conduction. In photoluminescence measurements, we observed not only an emission peak at 425 nm, which corresponds to the single Shockley-type stacking fault, but also one at 432 nm. In cross-sectional cathode luminescence images, emission lines at 425 nm and 432 nm merge and become straight. Transmission electron microscope images showed that the structure at the position with the 432 nm emission overlapped the single Shockley-type stacking faults.

引用

页码：962 / 964

页数：3

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